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DS2012SF
DS2012SF
Rectifier Diode
Replaces September 2001 version, DS4191-4.0 DS4548 -4.1 December 2001
FEATURES
s Double Side Cooling s High Surge Capability
KEY PARAMETERS VRRM 6000V IF(AV) 1320A IFSM 16500A
APPLICATIONS
s Rectification s Freewheel Diode s DC Motor Control s Power Supplies s Welding s Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V Conditions
DS2012SF60 6000 DS2012SF59 5900 DS2012SF58 5800 DS2012SF57 5700 DS2012SF56 5600 DS2012SF55 5500 Lower voltage grades available.
VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2012SF59 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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CURRENT RATINGS
Tcase = 75oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 1320 2073 1897 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load 947 1487 1283 A A A
Tcase = 100oC unless otherwise stated Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 1015 1594 1480 A A A Parameter Conditions Max. Units
Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 100oC Tcase = 100oC Tcase = 100oC 680 1067 920 A A A
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SURGE RATINGS
Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; Tcase = 150oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 150oC VR = 0 Max. 13.5 0.92 x 106 16.5 1.425 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 19.5kN with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18.0 150 175 22.0
o
Min. dc Anode dc -
Max. 0.022 0.038 0.052 0.004 0.008 160
Units
o
C/W
o
C/W C/W C/W C/W
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C C C
o
kN
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DS2012SF
CHARACTERISTICS
Symbol VFM IRRM QS IRR VTO rT Parameter Forward voltage Peak reverse current Total stored charge Peak recovery current Threshold voltage Slope resistance Conditions At 3400A peak, Tcase = 25oC At VRRM, Tcase = 150oC IF = 2000A, dIRR/dt = 3A/s, Tcase = 150C, VR = 100V At Tvj = 150C At Tvj = 150C Min. Max. 2.1 75 4500 120 1.0 0.42 Units V mA C A V m
CURVES
5000 Measured under pulse conditions Mean power dissipation - (W)
3000
4000
Instantaneous forward current IF - (A)
Tj = 25C 3000 Tj = 150C 2000
2000
1000
1000
dc Half wave 3 phase 6 phase
1.0 2.0 Instantaneous forward voltage, VF - (V) 3.0
0 0
0 0
500
1000
1500
2000
Mean forward current, IF(AV) - (A)
Fig.3 Dissipation curves A = 0.819645 B = -0.13673 C = 5.73 x 10-5 D = 0.042435 these values are valid for Tj = 125C for IF 500A to 5000A Where
Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.IF
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10000 Conditions: Tj = 150C VR = 100V IF = 2000A
1000 Conditions: Tj = 150C VR = 100V IF = 2000A
1000
IF QS dIF/dt
100 0.1
IRM
Reverse recovery current, Irr - (A)
Stored charge, QS - (C)
100
1.0 10 Rate of decay of forward current, dIF/dt - (A/s)
100
10 0.1
1.0 10 Rate of decay of forward current, dIF/dt - (A/s)
100
Fig.4 Total stored charge
25 ^ I2t = I2 x t 2 20
Peak half sine forward current - (kA)
Fig.5 Maximum reverse recovery current
0.1
Thermal Impedance - junction to case - (C/W)
1.00
Anode side cooled
15
I2t value - (A2s x 106)
Double side cooled 0.01
10 I2t
0.75
5
Conduction
Effective thermal resistance Junction to case C/W Double side 0.022 0.024 0.026 0.027 Single side 0.038 0.040 0.042 0.043
0 1 ms
10
1
23
5
10
20
0.50 50
d.c. Halfwave 3 phase 120 6 phase 60
0.001 0.001
0.01
Cycles at 50Hz Duration
0.1 Time - (s)
1.0
10
Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 175C)
Fig.7 Maximum (limit) transient thermal impedance junction to case
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PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole O3.6x2.0 deep (in both electrodes)
Cathode O76 max O48 nom
O48 nom
Anode
Nominal weight: 450g Clamping force: 19.6kN 10%
Package outline type code: F
Note: 1. Package maybe supplied with pins and/or tags.
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DS2012SF
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of `T' 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS4191-4 Issue No. 4.1December 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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